Malfunction detection of deposition equipment and vacuum systems: the group’s experts are primed for malfunction detection of deposition devices including thermal spraying, plasma spraying, electrophoretic deposition (EPD), electroplating, molecular-beam epitaxy (MBE), chemical beam epitaxy (CBE), chemical vapor deposition (CVD, PECVD or PACVD), atomic layer deposition (ALD), physical vapor deposition (PVD) or thermal evaporation (TE and GLAD), electron-beam physical vapor deposition (EBPVD), ion plating, pulsed laser deposition (PLD), activated reactive evaporation (ARE), ionized cluster beam deposition (ICBD), and magnetron sputtering. In addition, they can fix the design flaws of vacuum systems and optimize the ultimate pressure of vacuum chambers by means of repairing the chamber leaks.

Quality control of thin films and coatings: taking into account the fact that the quality of deposited films in terms of mechanical, optical, electrical, chemical, and anti-corrosive properties is an immensely important factor for scholars investigating the subject of thin-film physics, one can postulate the strong need for quality control. In this connection, KosarTech Group is perfectly prepared to control the quality of thin-film analyses such as indentation and nanoindentation (hardness and nano-hardness), scratch and nano-scratch analysis, wear testing, fatigue testing, corrosion testing in acidic and saline solutions, potentiodynamic polarization, electrochemical Impedance Spectroscopy (EIS), ultraviolet-visible spectroscopy (UV-Vis), crystallography and X-ray diffraction (XRD, GIXRD, SAXS, etc.), photoluminescence spectroscopy, Fourier-transform infrared spectroscopy (FTIR), ellipsometry, Auger Electron Spectroscopy (AES), Raman and micro-Raman spectroscopy, secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), X-ray fluorescence spectroscopy, inductively coupled plasma mass spectrometry (ICP), atomic absorption spectroscopy (AAS), energy-dispersive X-ray spectroscopy (EDS or EDX), Hall effect analysis, electrical resistance analysis, 4-point probes (four-terminal sensing), scanning electron microscope (SEM and FESEM), transmission electron microscopy (TEM, STEM, and HRTEM), atomic force microscopy (AFM), and Raman microscopy.